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Ordering number : ENA1149
2SC6144
SANYO Semiconductors
DATA SHEET
2SC6144
Applications
*
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Relay drivers, lamp drivers, motor drivers.
Features
* * * *
Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings 60 50 5 10 13 2 2 25 150 --55 to +150 Unit V V V A A A W W C C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608FA TI IM TC-00001285 No. A1149-1/4
2SC6144
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=270mA VCE=10V, IC=3A VCB=10V, f=1MHz IC=6A, IB=300mA IC=6A, IB=300mA IC=100A, IE=0A IC=1mA, RBE= IE=100A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 50 5 62 350 25 200 330 60 180 360 1.2 Ratings min typ max 10 10 560 MHz pF mV V V V V ns ns ns Unit A A
Package Dimensions
unit : mm (typ) 7508-002
10.0 3.2 3.5 7.2 4.5 2.8
Switching Time Test Circuit
PW=20s D.C.1% INPUT VR
IB1 OUTPUT IB2 RB + 100F + 470F VCC=20V
RL
18.1
16.0
50
1.6 1.2 0.75 14.0 0.7
VBE= --5V
5.6
IC=20IB1= --20IB2=5A
123
2.4
1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML
2.55
2.55
100m A 80 mA
40mA 35mA
10 9
IC -- VCE
mA 60
25 mA
40mA
35mA
5.0
IC -- VCE
A 18m A 16m
A 2 0m
14mA
30mA
4.5
12mA
Collector Current, IC -- A
Collector Current, IC -- A
8 7 6 5 4 3 2 1 0 0 1 2 3 4
25mA
45mA
50mA
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
20mA
10mA
8mA
15mA
10mA
A 30m
6mA
4mA 2mA
IB=0mA
0 0.5 1.0 1.5 2.0 IT13455
5mA
IB=0mA
5 IT13454
0
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
No. A1149-2/4
2SC6144
25
IC -- VBE
VCE=2V
7 5
hFE -- IC
VCE=2V
Ta=75C
Collector Current, IC -- A
20
DC Current Gain, hFE
3
25C
2
15
--25C
100 7 5
10
0 0 0.5
Ta =
5
25 C --25 C
75 C
1.0
1.5 IT13456
3 0.01
23
5 7 0.1
23
5 7 1.0
23
5 7 10
23
5
Base-to-Emitter Voltage, VBE -- V
5
Collector Current, IC -- A
7
IT13457
hFE -- IC
fT -- IC
VCE=10V
Ta=25C
3
5
Gain-Bandwidth Product, fT -- MHz
23 5
3 2
=2. V CE
DC Current Gain, hFE
2
0.
2V
V 0.5
0V
100 7 5 3 2
0.7V
100 7 5
1.0V
3 0.01
23
5 7 0.1
23
5 7 1.0
23
5 7 10
10 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
5
IT13458 1.0 7
Cob -- VCB
Collector Current, IC -- A
5 7 10 IT13459
VCE(sat) -- IC
f=1MHz
IC / IB=20
Output Capacitance, Cob -- pF
3 2
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2 0.1 7 5 3 2 0.01 7 5 0.01
100 7 5
3 2 0.1
2
3
5 7 1.0
2
3
5
7 10
2
3
5
7
23
5 7 0.1
23
--2
5 7 1.0
5 C
25 C
23 5 7 10
= Ta
75
C
23
5
Collector-to-Base Voltage, VCB -- V
1.0 7
IT13460 3
VCE(sat) -- IC
Collector Current, IC -- A
IT13461
VBE(sat) -- IC
IC / IB=50
IC / IB=20
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
5 3 2
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2
1.0
0.1 7 5 3 2 0.01 0.01
Ta= --25C
7 5
C C 5 75 a= --2 T
C 25
25C 75C
3
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
2 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector Current, IC -- A
IT13462
Collector Current, IC -- A
IT13463
No. A1149-3/4
2SC6144
3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Forward Bias A S O
ICP=13A Collector Dissipation, PC -- W IC=10A
10
s 1m
2.5
PC -- Ta
Collector Current, IC -- A
0m
2.0
s 00 =5 PT
s
DC
ms n 10 tio era op
1.5
No
he
at
1.0
sin
k
0.5
0.01 0.1
Tc=25C Single pulse
2 3 5 7 1.0 2 3 5 7 10 2 3
0 5 7 100 IT13464 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V
30
Ambient Temperature, Ta -- C
IT13452
PC -- Tc
Collector Dissipation, PC -- W
25
20
15
10
5
0 0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C
IT13453
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This catalog provides information as of March, 2008. Specifications and information herein are subject to change without notice.
PS No. A1149-4/4

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